Compact modeling Multigate device

different finfet structures, can modeled bsim-cmg

bsimcmg106.0.0, officially released on march 1, 2012 uc berkeley bsim group, first standard model finfets. bsim-cmg implemented in verilog-a. physical surface-potential-based formulations derived both intrinsic , extrinsic models finite body doping. surface potentials @ source , drain ends solved analytically poly-depletion , quantum mechanical effects. effect of finite body doping captured through perturbation approach. analytic surface potential solution agrees closely 2-d device simulation results. if channel doping concentration low enough neglected, computational efficiency can further improved setting specific flag (coremod = 1).

all of important multi-gate (mg) transistor behavior captured model. volume inversion included in solution of poisson’s equation, hence subsequent i–v formulation automatically captures volume-inversion effect. analysis of electrostatic potential in body of mg mosfets provided model equation short-channel effects (sce). electrostatic control end gates (top/bottom gates) (triple or quadruple-gate) captured in short-channel model.